◆ International conference papers (with referee reading) ◆



Research Record TOP

    2019年

  1. T. Sameshima, T. Kikuchi, T. Uehara, T. Arima1, M. Hasumi, T. Miyazaki, G. Kobayashi, and I. Serizawa: "MICROWAVE RAPID HEATING SYSTEM USING CARBON HEATING TUBE", Workshop on 17th International Conference on Microwave and High Frequency Heating (Spain, 2019) 318-325
  2. T. Miyazaki, G. Kobayashi, I. Serizawa, T. Kikuchi, T. Uehara, T. Arima, M. Hasumi, and T. Sameshima: "Carbon Heating Tube Rapid Heating System for Fabricating Silicon Solar Cells", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2019)
  3. T. Nagao, Y. Inouchi, J. Tatemichi, T. Sugawara, M. Hasumi, and T. Sameshima: "Phosphorus Followed by Hydrogen Two-Step Ion Implantation Used for Forming Low Resistivity Doped Silicon at 300oC", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2019)

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    2018年

  4. T. Sameshima, T. Uehara, T. Sugawara, M. Hasumi, T. Nagao, K. Yasuta, Y. Inouchi, and J. Tatemichi: "Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300oC", Workshop on 22nd International Conference on Ion Implantation Technology (Germany, 2018) P13
  5. T. Sameshima, M. Hasumi, Y. Hirokawa, T. Watanabe, M. Hino, G. Kojitani, and T. Mizuno: "Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and Its Application to Improve the Interface Properties of Metal-Oxide-", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2018) P-21.
  6. T. Nagao, T. Uehara, K. Yasuta, Y. Inouchi, J. Tatemichi, M. Hasumi, and T. Sameshima: "Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300oC", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2018) 4-2.
  7. T. Miyazaki, G. Kobayashi, T. Sugawara, T. Kikuchi, M. Hasumi, T. Sameshima: "Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2018) 4-1.
  8. K. Ota, T. Sameshima, G. Kojitani, M. Hino, T. Watanabe, M. Hasumi, T. Mizuno and M. Amara: "Photo-induced minority carrier annihilation for silicon samples with metal insulator semiconductor structure", Proc. Grand Renewable Energy (Yokohama, 2018) P-Pv-2-16
  9. T. Sameshima, K. Oshinari, G. Kojitani, M. Hino, T. Watanabe, M. Kondo, M. Yagi, M. Hasumi, W. Kubo, J. Shirakashi and M. Amara: "Reduction in connecting resistivity of intermediate adhesive layer for mechanically stacked multi-junction solar cells", Proc. Grand Renewable Energy (Yokohama, 2018) P-Pv-2-3
  10. M. Hasumi, Y. Ogawa, K. Oshinari, G. Kojitani, M. Hino, T. Watanabe, T. Sameshima and T. Mizuno: "Transparent and conductive layers used for reducing optical reflection loss for fabricating mechanically stacked multi-junction solar cells", Proc. Grand Renewable Energy (Yokohama, 2018) P-Pv-2-2

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    2017年

  11. T. Sameshima, Y. Ogawa and M. Hasumi: "Reduction in optical reflection at intermediate adhesive layer for mechanically stacked multi junction solar cells", Proc. European Materials Research Society (Strasbourg , France, 2017) O.7.10.
  12. T. Sameshima, K. Yasuta, M. Hasumi, T. Nagao and Y. Inouchi: "Activation of Silicon by Ion Implantation under Heating Sample at 200oC", Proc. European Materials Research Society (Strasbourg , France, 2017) P.9.51.
  13. M. Hasumi, Y. Ogawa, K. Oshinari, T. Sameshima: "Improvement in Effective Optical Absorbency for the Bottom Cells of Mechanical Stacked Multi-Junction Solar Cells", Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials (Sendai, 2017)
  14. T. Sugawara, N. Tanaka, S. Kimura,M. Hasumi, T. Nagao, Y. Inouchi, T. Sameshima: "Activation Behavior of Polycrystalline Silicon Films by Phosphorus Ion Implantation at 200oC", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2017) 270-271.

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    2016年

  15. T. Mizuno, Y. Nagamine, U. Omata, M. Yokoyama, T. Aoki, and T. Sameshima: "Novel Band Structure Modulations in Two/Three-Dimensional Silicon Carbon Alloys", Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials (Tsukuba, 2016) 663-634.
  16. S. Kimura, K. Ota, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima: "Crystallization of Silicon Thin Films By Microwave-Induced Rapid Heating", Proc. in PhotoVoltaic Technical Conference (San Diego, 2016) 2118.
  17. T. Sameshima, T. Nakamura, T. Motoki, M. Hasumi, and T. Mizuno: "Heat Treatment in Liquid Water Used to Passivate Silicon Surfaces", Proc. in PhotoVoltaic Technical Conference (Southern, 2016) D3-8-5.
  18. T. Sameshima, S. Kimura, S. Yoshidomi, T. Sugawara, S. Saito, and M. Hasumi: "Low Optical Reflection at Intermediate Adhesive Layer for Mechanically Stacked Multi-Junction Solar Cells", Proc. in PhotoVoltaic Technical Conference (Southern, 2016)
  19. Y. Ogawa, M. Hasumi, T. Sameshima, Y. Setoguchi, S. Kishida, and Y. Ando: "Pulsed laser irradiation used to change in electrical conductivity of indium gallium zinc oxide thin films", Proc. in The Second Smart Laser Processing Conference (Yokohama, 2016) A011.
  20. T. Motoki, K. Yasuta, H. Suzuki, T. Nakamura, M. Hasumi, T. Sameshima: "Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2016) 6-1.
  21. K. Ota, S. Kimura, M. Hasumi, A. Suzuki, M. Ushijima, and T. Sameshima: "Microwave Rapid Heating Used for Diffusing Impurities in Silicon", Workshop on Active Matrix Flatpanel Display and devices (Kyoto, 2016) P-51.
  22. T. Sameshima, S. Kimura, S. Yoshidomi, T. Sugawara, and M. Hasumi: "REDUCTION IN OPTICAL REFLECTION AT INTERMEDIATE ADHESIVE LAYER FOR MECHANICALLY STACKED MULTI-JUNCTION SOLAR CELLS", 32th International European Conference on Surface Science (Grenoble, 2016) O4-M4E _28 (invited).
  23. T. Sameshima, T. Nakamura, T. Motoki, and M. Hasumi: "HEAT TREATMENT IN LIQUID WATER USED TO PASSIVATE SILICON SURFACES", 32th International European Conference on Surface Science (Grenoble, 2016) P2-OXI_17.

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    2015年

  24. S. Kimura, S. Yoshidomi, M. Hasumi, and T. Sameshima: "Reduction in Optical Reflection Loss at Intermediate Adhesive Layer for Mechanical Stacked Multi-Junction Solar Cells", Workshop on Active Matrix Flat Panel Displays (Kyoto, 2015) P-28.
  25. M. Hasumi, T. Sameshima, T. Motoki, T. Nakamura and T. Mizuno: "Annihilation Properties of Photo-Induced Carrier in Silicon PN Junction", Workshop on Active Matrix Flat Panel Displays (Kyoto, 2015) P-27.
  26. T. Nakamura, T. Sameshima, M. Hasumi, and T. Mizuno: "Heat treatment in 110oC liquid water used for Passivating silicon surfaces", Workshop on Active Matrix Flat Panel Displays (Kyoto, 2015) 5-1.
  27. T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi: " Laser Induced Minority Carrier Lifetime in PN Junction", Proc. of LPM2015 the 15th International Symposium on Laser Precision Microfabrication (Kitakyushu, 2015) P2.
  28. T. Sameshima and M. Hasumi: "Behavior of Photo Induced Minority Carrier Lifetime in PN Junction with Different Bias Voltages", Proc. European Materials Research Society (Lille, France, 2015) CP2-19.
  29. T. Nakamura, T. Sameshima, M. Hasumi and T.sa Mizuno: "Passivation of Silicon Surfaces by Treatment in Water at 110oC: ", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2015) MRS Online Proceedings Library Archive Volume 1770.

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    2014年

  30. J. Furukawa, S. Shigeno, S. Yoshidomi, T. Node, M. Hasumi, T. Sameshima, and Tomohisa Mizuno: "Minority Carrier Annihilation at Crystalline Silicon Interface in Metal Oxide Semiconductor Structure", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2014) MRS Online Proceedings Library Archive Volume 1666.
  31. T. Nakamura, S. Yoshidomi, M. Hasumi, T. Sameshima, and Tomohisa Mizuno: "Crystallization of Amorphous Silicon Thin Films by Microwave Heating", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2014) MRS Online Proceedings Library Archive Volume 1666.
  32. T. Sameshima, M. Hasumi, and T. Mizuno: "Laser Annealing of Plasma-Damaged Silicon Surface", E-Mater. Res. Soc. Symp. Proc. (Lille, France, 2014) JP-XV-11.
  33. T. Sameshima, S. Yoshidomi, and M. Hasumi: "Mechanical Stacking Multi Junction Solar Cells Using Transparent Conductive Adhesive", E-Mater. Res. Soc. Symp. Proc. (Lille, France, 2014) Y-13-3.
  34. T. Nakamura, S. Yoshidomi, M. Hasumi, and T. Sameshima: "Passivation of Silicon Surfaces by Heat Treatment in Boiled Water and its Application of Solar Cells", Proc. 2014 Workshop on Active Matrix Flat Panel Displays (Kyoto, 2014) p-46.
  35. T. Sameshima, S. Yoshidomi, T. Nakamura, S. Shigeno, and M. Hasumi: " Passivation of Silicon Surfaces by Oxygen Radical followed by High Pressure H2O Vapor Heat Treatments and Its Application to Solar Cell Fabrication", Proc. 2014 Workshop on Active Matrix Flat Panel Displays (Kyoto, 2014) p-45
  36. S. Yoshidomi, N. Fujii, J. Furukawa, M. Hasumi, and T. Sameshima: "Decrease in reflection loss at intermediate adhesive layer for mechanical stacking multi junction solar cells", Proc. 2014 Workshop on Active Matrix Flat Panel Displays (Kyoto, 2014) p-43
  37. T. Sameshima, H. Nomura, S. Yoshidomi, and M. Hasumi: "MULTI-JUNCTION SOLAR CELLS USING OPTICAL REFLECTION", Proc. International Conference of Grand Renewable Energy 2014 (Tokyo, 2014) 168.
  38. S. Yoshidomi, M. Hasumi and T. Sameshima: " Investigation of Conductivity of Adhesive Layer Including In2O3-SnO2 Particles for Multi Junction Solar Cells", Proc. International Conference of Grand Renewable Energy 2014 (Tokyo, 2014) 233.

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    2013年

  39. T. Sameshima, T. Nakamura, S. Yoshidomi, M. Hasumi, T. Ishii, Y. Inouchi, M. Naito, and T. Mizuno: "Activation of Silicon Implanted with Dopant Atoms by Microwave Heating", Ext. Abstr. Solid State Devices and Materials, 2013, PS-15-1
  40. T.Mizuno, Y.Nagata, Y.Suzuki, Y.Nakahara, T.Tanaka, T.Aoki and T. Sameshima: "Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates", Ext. Abstr. Solid State Devices and Materials, 2013, PS-3-21
  41. T.Mizuno, Y.Nakahara, Y.Nagata, Y.Suzuki, Y.Kubodera, Y.Shimizu, T.Aoki, and T. Sameshima: "Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS", Ext. Abstr. Solid State Devices and Materials, 2013, D-1-2
  42. S. Yoshidomi, C. Akiyama, J. Furukawa, M. Hsumi, T. Ishii, T. Sameshima, Y. Inouchi, and M. Naito: "Activation of Silicon Implanted with Phosphorus Atoms by Microwave Heating" Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2013)P181.
  43. J. Furukawa, S. Yoshidomi, M. Hasumi, and T. Sameshima: "Minority Carrier Annihilation at Crystalline Silicon Surface in MOS Structure", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2013)P185.
  44. T. Sameshima and S. Shibata: "Annihilation of Photo-Induced Minority Carrier Caused by Ion Implantation and Rapid Thermal Annealing", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2013)P215.
  45. T. Sameshima, H. Abe, M. Hasumi, T. Mizuno, and N. Sano:"Passivation of Silicon Surface by Laser Rapid Heating", Proc. of LPM2013 the 14th International Symposium on Laser Precision Microfabrication (Niigata, 2013) #13-043: A174.

    46. PAGE TOP


    2012年

  46. S. Yoshidomi, M. Hasumi and T. Sameshima: "Multiple-Connected Solar Cells Used by Band-Gap Induced Cascaded Light Absorption", Proc in 9th Thin Film Materials & Devices Meeting (Nara, 2012).
  47. S. Yoshidomi, M. Hasumi, T. Sameshima, K. Makita, K. Matsubara, and M. Kondo: "Multi-Junction Solar Cells Fabricated With Conductive Transparent Adhesive", in Proc in 9th Thin Film Materials & Devices Meeting (Nara, 2012).
  48. T. Sameshima, K. Betsuin, T. Nagao, and M. Hasumi: "Increase in Minority Carrier Lifetime Measured by Microwave Irradiation Method", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2012)4-2.
  49. T. Sameshima, Y. Takiguchi, T. Nagao, and M. Hasumi: "Minority Carrier Lifetime Measurements by Multiple Wavelength Light Induced Carrier Microwave Absorption Method", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2012)P43.
  50. J. Furukawa, T. Nagao, and T. Sameshima: "Minority Carrier Annihilation Property for Crystalline Silicon Surfaces", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2012) P44.
  51. H. Abe, S.Yoshidomi, Y. Nagatomi, M. Hasumi and T. Sameshima: "Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H2O Vapor Heat Treatment", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2012) 1271296.
  52. T. Sameshima, K. Betsuin, and S. Yoshidomi: "Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating" Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2012) 1271091.
  53. Y. Nagatomi, S.Yoshidomi, M. Hasumi, T. Sameshima, and A. Kohno: "Formation of Aluminum Oxide Films on Silicon Surface by Aluminum Evaporation in Oxygen Gas Atmosphere" Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2012) 1271515.
  54. A. Shuku, E. Takahashi, Y. Andoh, Y. Nagatomi, and T. Sameshima: "Improvement in Electrical Characteristics of Microcrystalline Silicon Thin Film Transistors by High-pressure H2O vapor Heat Treatment" Proc in 8th Thin Film Materials & Devices Meeting (Kyoto, 2012) 120223056-01-05.
  55. T. Nagao, T. Sameshima,Y. Andoh, A. Shuku and E. Takahashi: "Surface Passivation of Crystalline Silicon by Micro Crystalline Silicon Deposition Followed by High-Pressure H2O Vapor Heat Treatment" Proc in 8th Thin Film Materials & Devices Meeting (Kyoto, 2012) 120223055-01-05.

    56. PAGE TOP


    2011年

  56. M. Hasumi, Y. Kanda, S. Yoshidomi, and T. Sameshima: "Fabrication of Aluminum Oxide Films by Aluminum Metal Evaporation in Oxygen Gas Atmosphere for Surface Passivation ", Technical Digest of the 24th Int. Photovoltaic Solar Energy Conf. (Fukuoka, Japan, 2011) 2D-1P-26.
  57. T. Nagao, T. Sameshima,　Y. Andoh, A. Shuku and E. Takahashi: "Surface Passivation of Crystalline Silicon by microcrystalline Silicon Deposition Followed by High-Pressure H2O Vapor Heat Treatment", Technical Digest of the 24th Int. Photovoltaic Solar Energy Conf. (Fukuoka, Japan, 2011) 2D-1P-25.
  58. T. Sameshima, K. Betsuin, W. Kato, Y. Kanda, S. Yoshidomi, M. Hasumi, and N. Sano: "Decrease in Minority Carrier Lifetime Caused by Rapid Laser Heating", Proceedings of LPM2011 - the 12th International Symposium on Laser Precision Microfabrication (Takamatsu, 2011) ID 0071.
  59. Y. Kanda, T. Sameshima, M. Hasumi, J. Tatemichi, Y. Inouchi, and M. Naito: "Laser Induced Formation of Buried Void Layer in Silicon", Proceedings of LPM2011 - the 12th International Symposium on Laser Precision Microfabrication (Takamatsu, 2011) ID 0094.
  60. J. Takenezawa, M. Hasumi, and T. Sameshima: "High-Pressure H2O Vapor Heat Treatment Used to Improve Polycrystalline Solar Cell Characteristics", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2011) P-31.
  61. T. Nagao, M. Hasumi, T. Sameshima, and Y. Andoh: "Surface Passivation of Crystalline Silicon by Amorphous Silicon Deposition Followed by High-Pressure H2O Vapor Heat Treatment", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2011) P-25.
  62. K. Betsuin, Y. Kanda, W. Kato, S.Yoshidomi, M. Hasumi, T. Sameshima: N. Sano, and T. Mizuno, "Change in Minority Carrier Lifetime Caused by Rapid Laser Heating", Proc. in Workshop on Active Matrix Flat Panel Displays (Kyoto, 2011) P-26.
  63. Y. Fujimoto, J. Tatemichi, Y. Inouchi, M. Naito, Y. Nagao, K. Kogure, S. Yoshitomi, Y.Kanda, M. Hasumi, and T. Sameshima: "Photo-Induced Carrier Recombination Properties of Silicon caused by H+ Implantation", AIP Conf. Proc. 1321 (2011) 212.
  64. M. Hasumi, K. Ukawa, T. Sameshima, N.Sano, M. Naito and N. Hamamoto: "Formation of Shallow PN Junction by Cluster Boron Implantation and Rapid Annealing Using Infrared Semiconductor Laser", AIP Conf. Proc. 1321 (2011) 109.

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    2010年

  65. T. Nagao, S. Yoshidomi, M. Hasumi, T. Sameshima and T. Mizuno: "Minority Carrier Lifetime Measurement by Photo-Induced Carrier Microwave Absorption Method", Proc in 7th Thin Film Materials & Devices Meeting (Nara, 2010) 110107067-1 - 6.
  66. S. Yoshidomi, M. Hasumi and T. Sameshima: "Oxygen Plasma Followed by High-Pressure H2O Vapor Heat Treatment Used for Passivation of Silicon Surfaces", Proc in 7th Thin Film Materials & Devices Meeting (Nara, 2010) 110107077-1 - 5.
  67. T. Sameshima, K. Kogure, and M. Hasumi: "Crystalline Silicon Solar Cells With Two Different Metals", Proc in 7th Thin Film Materials & Devices Meeting (Nara, 2010) 110107048-1 - 5.
  68. T. Sameshima, "Polycrystalline Silicon Thin Film Transistors", Meet. Abstr. Electrochem. Soc., 1002 (2010) 1807 (invited).
  69. M. Hasumi, J. Takenezawa, T. Nagao, Y. Kanda and T. Sameshima: "HIGH PRESSURE H2O VAPOR HEAT TREATMENT FOR IMPROVEMENT IN PASSIVATION LAYERS OF CRYSTALLINE SILICON SOLAR CELLS", RENEWABLE ENERGY 2010 Proceedings (2010.7) P-Pv-28.
  70. T. Sameshima, K. Kogure and M. Hasumi: "Crystalline Silicon Solar Cells Used with Al and Au Metals", Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, (Tokyo, 2010) K-4-4.
  71. J. Takenezawa, M. Hasumi, T. Sameshima, T. Koida, T. Kaneko, M. Karasawa and M. Kondo, "Stacked Solar Cells using Transparent and Conductive Adhesive", Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials, (Tokyo, 2010) I-8-4.
  72. T. Nagao, J. Takenezawa, M. Shimokawa, M. Hasumi and T. Sameshima: "Minority Carrier Lifetime Measurements by Microwave Photo-Induced Carrier Absorption Method", Proc. in Workshop on Active Matrix Flat Panel Displays (Tokyo, 2010) 239-242.
  73. M. Hasumi, J. Takenezawa, T. Nagao and T. Sameshima, "Characterization of Plasma Irradiated Properties by Photo Induced Carrier Microwave Absorption Method", Proc. in Workshop on Active Matrix Flat Panel Displays (Tokyo, 2010) 163-166.

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    2009年

  74. H. Kakemoto, M. Hasumi, and T. Sameshima, "Development of Multi-junction technique for Semiconductor substrates by using Transparent and conductive polymer for Solar cells’ application", Proc in 6th Thin Film Materials & Devices Meeting (Kyoto, 2009) 100228041-1-5.
  75. M. Hasumi, T. Nagao, S. Yoshidomi and T. Sameshima, "High-Pressure H2O Vapor Heat Treatment for Characteristic Improvement in Crystalline Silicon Solar Cells", Proc in 6th Thin Film Materials & Devices Meeting (Kyoto, 2009) p100228116-1-6.
  76. M. Hasumi, J. Takenezawa, Y. Kanda, T. Nagao and T. Sameshima, "Characterization of SiOx/Si Interface Properties by Photo Induced Carrier Microwave Absorption Method", Proc in 6th Thin Film Materials & Devices Meeting (Kyoto, 2009) p100228114-1-6.
  77. T. Sameshima, K. Ukawa, N. Sano, M.Naito and N. Hamamoto, "Analysis of Impurity doping Using Free Carrier Absorption", in Proc in 6th Thin Film Materials & Devices Meeting (Kyoto, 2009) p100228044-1-6.
  78. T. Sameshima, M.Shimokawa, J.Takenezawa, T.Nagao M.Hasumi, S.Yoshidomi, N.Sano, T.Mizuno, "Analysis of Microwave Absorption by Photo-Induced Carriers at PN Junction Formed by Ion Implantation", Proc in 6th Thin Film Materials & Devices Meeting (Kyoto, 2009) p100228115-1-6.
  79. T. Mizuno, N. Mizoguchi, K. Tanimoto, T. Yamauchi, T. Tezuka, and T. Sameshima, "Novel Source Relaxed-/Strained-Layers Heterojunction Structures for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates", Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, (Sendai, 2009) A-4-2.
  80. N.Sano, K.Ukawa, T. Sameshima, M.Naito and N. Hamamoto, "Infrared Semiconductor Laser Annealing Used For Activation of Silicon Implanted With Boron and Phosphorus Atoms", Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, (Sendai, 2009) P-1-18.
  81. M. Hasumi, M. Shimokawa, K. Ukawa, T. Haba, Y. Mizutani, and T. Sameshima, "Defect Passivation of Solar Cells by High Pressure H2O Vapor Treatment", Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, (Sendai, 2009) P-14-6.
  82. M. Hasumi, W. Kato, T. Sameshima, and N. Sano, "Analysis of Crystalline Volume Ratio of Laser Induced Crystallized Silicon Films", Proc. of the 5th International Congress on Laser Advanced Materials Processing (Kobe, 2009) 00065-1～4.
  83. T. Sameshima, M. Hasumi, K. Kogure, T. Haba, and N. Sano, "Crystallization of Silicon Thin Films by Infrared Semiconductor Laser Irradiation Using Carbon Particles", Proc. of the 5th International Congress on Laser Advanced Materials Processing (Kobe, 2009) 00063-1～4.
  84. Y. Mizutani, T. Sameshima, K. Motai and K. Ichimura, "Defect Reduction in Polycrystalline Silicon Thin Films at 150oC by High-Pressure H2O Vapor Heat Treatment", Proc. in Workshop on Active Matrix Flat Panel Displays (Nara, 2009) 223.
  85. T. Haba and T. Sameshima, "Infrared Semiconductor Laser Irradiation used for Fabricating Polycrystalline Silicon Thin Film Transistors", Proc. in Workshop on Active Matrix Flat Panel Displays (Nara, 2009) 125.
  86. K. Ukawa, T. Sameshima, N. Sano, M. Naito and N. Hamamoto, "Activation of Silicon with Phosphorus and Boron Atoms by Infrared Semiconductor Laser Annealing", Proc. in Workshop on Active Matrix Flat Panel Displays (Nara, 2009) 133.

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    2008年

  87. T. Haba, T. Sameshima and N. Sano, "Crystallization of Silicon Thin Films by Infrared Semiconductor Laser Irradiation", Proc in 5th Thin Film Materials & Devices Meeting (Nara, 2008)p3-1-3-5.
  88. K. Ukawa, Y. Sakakura T. Sameshima, N.Sano, M.Naito and N. Hamamoto, "Analysis of Semiconductor Laser-Induced Impurity Activation Using Free Carrier Absorption", Proc in 5th Thin Film Materials & Devices Meeting (Nara, 2008)p6-1-6-6.
  89. T. Sameshima and T. Haba, "PMicrowave Absorption by Light-induced Free Carriers in Silicon", Proc in 5th Thin Film Materials & Devices Meeting (Nara, 2008)p2-1-2-6.
  90. Y. Urabe and T. Sameshima, "Polysilazane Precursor Used for Formation of Oxidized Insulator", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2008) A05-02- 423976.
  91. T. Sameshima, "Infrared Semiconductor Laser Annealing Used for Formation of Shallow Junction", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2008) 1070-E03-04.
  92. T. Sameshima, H. Hayasaka, and T. Haba, "Analysis of Free Carrier in Semiconductor Using Microwave Absorption", Proc. in Workshop on Active Matrix Flat Panel Displays (Tokyo, 2008) p205-208
  93. T. Sameshima, "Polycrystalline Silicon Films for TFT", Proc. in Workshop on Active Matrix Flat Panel Displays (Tokyo, 2008) p77-80 (invited).
  94. K. Yoshioka, M. Shimokawa, N. Sano, T. Sameshima, "Formation of pn Junctions for Crystalline Silicon Solar Cells by Means of Infrared Laser Irradiation", : proc. in 33rd IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (San Diego 2008) N10 341-342.

    95. PAGE TOP


    2007年

  95. Y. Urabe and T. Sameshima, "Polysilazane Precursor Used for Formation of Oxidized Insulator", Proc in 4th Thin Film Materials & Devices Meeting (Kyoto, 2007) p101-105.
  96. Y. Urabe, T. Sameshima, K. Motai and K. Ichimura, " Improvement in Electrical Properties of SiO2 Films Formed by Sputtering Method", Proc in 4th Thin Film Materials & Devices Meeting (Kyoto, 2007) p091-095.
  97. T. Sameshima, M. Takiuchi, M. Simokawa, N. Sano, Y. Matsuda, Y. Andoh and M.Naito, " Activation of Silicon Implanted with Phosphorus Atoms by Heat Treatment at Low Temperature", Proc in 4th Thin Film Materials & Devices Meeting (Kyoto, 2007) p061-066.
  98. N. Sano, T. Sameshima, Y. Matsuda and Y. Andoh, " Activation of Implanted Phosphorus Atoms in Silicon Wafers by Infrared Semiconductor Laser Annealing Using Carbon Films as Optical Absorption Layers", Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, (Tsukuba, 2007) pp. 362-363.
  99. T. Sameshima, M. Takiuchi, M. Maki, N.. Andoh, Y. Matsufa, Y. Andoh, and N. Sano, " Recrystallization and Activation of Silicon Implanted with Phosphorus Atoms by Infrared Semiconductor Laser Annealing", Proc. in Workshop on Active Matrix Flat Panel Displays (Hyogo, 2007) p155-158.
  100. T. Sameshima, N. Andoh, and N.Sano, " Analysis of Crystalline Volume Ratio of Poly-Si Films", Proc. in Workshop on Active Matrix Flat Panel Displays (Hyogo, 2007) p159-162.
  101. T. Sameshima, " Laser Crystallization of Silicon for Large Area Electronics", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2007) A16.1 (invited).

    102. PAGE TOP


    2006年

  102. T. Sameshima, M. Maki, M. Takiuchi, N. Andoh, N. Sano, Y.Matsuda and Y. Andoh, " Activation of phosphorus atoms implanted in silicon by infrared semiconductor laser", in Proc in 3rd Thin Film Materials & Devices Meeting (Nara, 2006).
  103. N. Sano, M. Maki, N. Andoh T. Sameshima A. Masuda, T. Matsui and M. Kondo, " Laser Crystallization of Silicon Films Using Optical Absorption Layer Formed by Spin-Coating of Carbon Particles", in Proc in 3rd Thin Film Materials & Devices Meeting (Nara, 2006) p52-57.
  104. T. Sameshima, Extended abstracts of Int. Conf. polycrystalline semiconductor, " Laser Crystallization for Large Area Electronics", (2006, Freudenstadt) I7 (Invited).
  105. N. Andoh, M. Maki, T. Sameshima, N. Sano, " Laser Crystallization of Silicon Thin Films Using Photo Absorption Layer Formed by Spin Coating of Carbon Particles", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2006) 0958-L07-23.
  106. H. Hayasaka, T. Sameshima and M. Kimura, " Analysis of Threshold Voltage for Silicon Thin Film Transistors ", Proc. in Workshop on Active Matrix Flat Panel Displays and Devices (Shinjuku, 2006) p215-218.
  107. T. Sameshima, H. Hayasaka, M. Maki, A. Masuda, T. Matsui and M. Kondo, " Defect Reduction of Polycrystalline Silicon Thin Films by High-Pressure H2O Vapor ", Proc. in Workshop on Active Matrix Flat Panel Displays and Devices (Shinjuku, 2006) p143-146.
  108. K.Yoshioka, T. Sameshima and K. Takechi, " A Quick Thin-Film Device Transfer Process by Thermal Shear Stress ", Proc. in Workshop on Active Matrix Flat Panel Displays and Devices (Shinjuku, 2006)p139-142.
  109. N. Sano, M. Maki, N. Andoh and T. Sameshima, " Infrared Laser-Annealing of Silicon Films Using Diamond Like Carbon as Photo-Absorption Layer ", Proc. in Workshop on Active Matrix Flat Panel Displays and Devices (Shinjuku, 2006) p329-332.
  110. T. Sameshima, M. Maki, N. Andoh and N. Sano, " Rapid Crystallization of Silicon Films by Infrared Laser ", Proc. in The 7th International Symposium on Laser Precision Microfabrication, (Kyoto, 2006) #06-76.
  111. N. Sano, M. Maki, N. Andoh and T. Sameshima, " High Efficiency Crystallization of Silicon Thin Films Using Continuous Wave Infrared Laser ", Mater. Res. Soc. Symp. Proc. (San Francisco, CA, 2006) 0910-A14-02.
  112. K. Yshioka, M. Yamamoto, T. Sameshima and K. Takechi, " Approaches to a quick transfer process for electrical circuits onto plastic substrates ", Proceeding of the 2nd International TFT Conference (Kitakyushu, 2006) p146-149.
  113. N. Andoh, T. Sameshima, M. Maki and N. Sano, " Rapid crystallization of Silicon Films using Diamond-Like Carbon Films ",Proceeding of the 2nd International TFT Conference (Kitakyushu, 2006) p142-145.

    114. PAGE TOP


    2005年

  114. K. Motai and T. Sameshima, " Analysis of SiO2/Si interface properties using photo-induced carriers ",Proc in 2nd Thin Film Materials & Devices Meeting (Kyoto, 2005) p52-57.
  115. P. Punchaipetch, H. Nakamura, Y. Uraoka, T. Fuyuki, T. Sameshima and S. Horii, " Improving high-κ gate dielectrics properties by high pressure water vapor annealing ",Extended Abstracts 2005 International Conference on Solid State Device and Materials (Kobe, 2005) p502-503.
  116. K. Ichimura, Y. Naito and T. Sameshima, " Low temperature fabrication of high performance poly-Si TFTs using sputtering method ",ISSP Symposium Program (2005).
  117. I. Tsunoda, R. Matsuura, M. Ikishima, H.Watakabe, T. Sameshima and M. Miyao, " Direct formation of strained Si on insulator by laser annealing ", proc in Fourth International Conference on Silicon Epitaxy and Heterostructures (2005) 25I-3.
  118. A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe and T. Sameshima, " In-situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure ", proc in Fourth International Conference on Silicon Epitaxy and Heterostructures, (2005).
  119. H. Watakabe, T. Sameshima, H. Kanno, and M. Miyao, " Electrical properties for poly-Ge films fabricated by pulsed laser annealing ", proc. in Fourth International Conference on Silicon Epitaxy and Heterostructures, (2005).
  120. K. Yoshioka, T. Sameshima, M. Suzuki1 and K. Takechi, " Application of Germanium Oxide Films to Transfer of Electrical Circuits to Foreign Plastic Substrates ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Kanazawa, 2005) p315-318.
  121. M. Miyashita, Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, T. Sameshima, " Improvement of Reliability in Low-Temperature Poly-Si Thin Film Transistors by Water Vapor Annealing ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Kanazawa, 2005) p277-280.
  122. T. Sameshima and M. Kimura, " Characterization of Polycrystalline Silicon Thin Film Transistors ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Kanazawa, 2005) p245-248.
  123. T. Sameshima and N. Andoh, " Crystallization of Silicon Films Using Diamond Like Carbon Films as a Heating Layer ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Kanazawa, 2005) p175-178.

    124. PAGE TOP


    2004年

  124. T. Sameshima, H. Watakabe, N. Andoh and M. Kimura, " Characteristics of Doped Poly-Si TFTs Fabricated by Pulsed Laser Crystallization ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p52-57.
  125. H. Watakabe, and T. Sameshima, " Improvement of SiOx Films by High Pressure H2O Vapor Heat Treatment ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p46-51.
  126. K. Ichimura, Y. Naito and T. Sameshima, " Low Temperature Fabrication of Poly-Si TFTs using 150 oC High Pressure H2O Heat Treatment ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p40-45.
  127. T. Strutz, T. Ohno, A. Kojo, T. Oitome, N. Andoh, H. Watakabe, T. Sameshima, " Low impurity thin films for high performance TFTs deposited in a Plasma Box reactor ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p34-39.
  128. K. Kitahara, H. Watakabe, Y. Ohashi, Y. Inoue, and T. Sameshima, " Effects of High‐Pressure H 2O Vapor Heat Treatment on Poly-Si Thin Films Observed by Raman Spectroscopy ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p25-28.
  129. S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, M. Asami, H.Watakabe, N. Andoh, T. Sameshima, " Crystallization of a-Si Films using Thermal Plasma Jet and Its Application to Thin Film Transistor Fabrication ", Proc in 1st Thin Film Materials & Devices Meeting (Nara, 2004) p9-13.
  130. T. Sameshima and N. Andoh, "Laser Ablation of Carbon Films Used for Transfer of Electronic Ddevices", Proc. in Mat. Res. Soc. Symp. 849 (Boston, 2004) KK9.5.
  131. T. Strutz, T. Ohno, A. Kojo, T. Oitome, N. Andoh, H. Watakabe, T. Sameshima, " TEOS Gate Insulator Oxide for poly-Si TFT using a Parallel Processing PECVD Production Tool ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2004) p235-237.
  132. S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, M. Asami, H. Watakabe,N. Ando and T. Sameshima, " Crystallization of Si Thin Film Using Thermal Plasma Jet and Its Application toThin-Film Transistor Fabricatio ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2004) p179-180.
  133. K. Ichimura, W. Saito, and T. Sameshima, " Poly-Si TFT fabrication at 200℃ using sputtered SiO2 gate insulator and high pressure H2O heat treatment ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2004) p243-245.
  134. Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki, H. Watakabe and T. Sameshima, " Improvement of Reliability by Water Vapor Annealing in Low-Temperature Poly-Si Thin Film Transistors ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2004) p265-268.
  135. H. Watakabe and T. Sameshima, " Non-Thermal-Equilibrium Characteristics of Poly-Si TFTs ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2004) p261-264.
  136. T. Sameshima, " Progress in Fabrication Technologies of Polycrystalline Silicon Thin Film Transistors at Low Temperatures ", Proc. in AsiaDisplay/IMID’04 (Tegu, Korea, 2004) P8-3 (invited).
  137. N. Andoh and T. Sameshima, " Pulsed Laser-induced Electrical-Current Joule heating for Crystallization of Silicon Thin Films ", Proc. in The 5th International Symposium on Laser Precision Microfabrication, (Nara, 2004) p464-469.
  138. H. Watakabe and T. Sameshima, H. Kanno, T. Sadoh and M. Miyao, " Formation of Polycrystalline-Silicon-Germanium Films by Pulsed Laser-Induced Rapid Annealing ", Proc. in The 5th International Symposium on Laser Precision Microfabrication, (Nara, 2004) p426-431.

    139. PAGE TOP


    2003年

  139. T. Sameshima, M. Yachi and N. Andoh, ”Improvement of SiO2/Si interface properties using high-pressure H2O vapor heating”, Proc. in Third World Conference on Photovoltaic Solar Energy Conversion”, Proc. in Third World Conference on Photovoltaic Solar Energy Conversion (Osaka, 2003), p1155-1157.
  140. N. Andoh and T. Sameshima ”Lateral Crystallization of Silicon Films Using Joule Heating”, Proc. in Third World Conference on Photovoltaic Solar Energy Conversion (Osaka, 2003) . p1725-1728.
  141. N. Andoh, T. Sameshima and Y. Andoh, "Activation of Impurity atoms in Polycrystalline Silicon Films at low temperature ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2003) p21-24.
  142. T. Strutz, T. Ohno, T. Oitome, M. Suzuki, H. Watakabe, and T. Sameshima, "Electrical Properties of Laser Crystallized Silicon-Germanium Film", J. Broussard, M. Elyaakoubi, Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2003) p115-118.
  143. H. Watakabe, T. Sameshima, Y. Kanno, T. Sadoh and M. Miyao "Electrical Properties of Laser Crystallized Silicon-Germanium Film", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2003) p121-124.
  144. Y. Kaneko and T. Sameshima, " Polycrystalline Silicon Thin Film Transistors Fabricated by Rapid Joule Heating of Metal Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo , 2003) p33-36.

    145. PAGE TOP


    2002年

  145. H. Watakabe M. Suzuki and T. Sameshima, " Polycrystalline Silicon Thin Film Transistors Fabricated by Defect Reduction Methods ", Proc. in polycrystalline semiconductors VII 82-83, (Nara, 2002) p37-42.
  146. N. Andoh and T. Sameshima, " Lateral Crystalline Grain Growth by Combination of Laser Irradiation with Rapid Substrate Heating ", Proc. in polycrystalline semiconductors VII 82-83, (Nara, 2002) p179-184.
  147. Y. Kaneko and T. Sameshima, "Rapid Joule Heating with Metal Films Used to Crystallize Silicon Films ",Proc. in polycrystalline semiconductors VII 82-83, (Nara, 2002) p225-230.
  148. T. Sameshima, "Progress in Laser Annealing for Low-Temperature Semiconductor Processing and Its Application to Advanced Electronics and Display Devices", Proc in The International Congress on Applications of Lasers and Electro-Optics (Arizona, 2002) M105 (invited).
  149. Y. Kaneko and T. Sameshima, "Formation of Doped Polycrystalline Silicon by Rapid Joule Heating of Metal Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2002) p49-52.
  150. T. Strutz, Y. Nakamura, T. Oitome, H. Watakabe, M. Yachi, T. Sameshima, F. Farmakis, J. Broussard, H.T. Quoc, M. Elyaakoubi, "Formation of Doped Polycrystalline Silicon by Rapid Joule Heating of Metal Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2002) p127-130.
  151. Y. Kaneko and T. Sameshima, "Polycrystalline Thin Film Transistors Fabricated by Rapid Joule Heating of Metal Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2002) p107-110.
  152. H. Watakabe and T. Sameshima," High Pressure H2O vapor Heat treatment Used for Fabrication Poly-Si TFTs ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2002) p103-106.
  153. H. Watakabe and T. Sameshima, "Defect reduction technologies Used to Fabricate Poly-Si TFTs ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2002) p45-48.

    154. PAGE TOP


    2001年

  154. T. Sameshima, Y. Kaneko, N. Andoh and T. Saitoh, " Passivation of SiO2/Si Interfaces Using High-Pressure H2O Vapor Heating ", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Jeju, Korea, 2001) p203-204.
  155. N. Andoh and T. Sameshima, "Formation of Large Crystalline Grain Silicon Thin Films by Electrical Current-Induced Joule Heating ", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Jeju, Korea, 2001) p461-462.
  156. H. Watakabe, T. Watanabe, N. Andoh and T. Sameshima, "Analysis of Free Carrier Optical Absorption Used for Characterization of Solid Phase Crystallized Silicon Films ",Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Jeju, Korea, 2001) p351-352.
  157. T. Watanabe, H. Watakabe, K. Asada, T. Sameshima and M. Miyasaka,"Characterization of Electrical and Structural Properties of Solid Phase Crystallized Silicon Films ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2001) p115-118.
  158. N. Andoh, T. Mohri and T. Sameshima, "Formation of Polycrystalline Silicon Thin Films by Electrical Current-Induced Joule Heating" Proc. of Workshop in Active Matrix Liquid Crystal Displays (Tokyo, 2001) p239-242.
  159. H. Watakabe, Y. Tsunoda, T. Sameshima and M. Kimura, "Characterization of Polycrystalline Silicon Thin Film Transistor", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2001) p45-48.
  160. Y. Kaneko, N. Andoh, and T. Sameshima, "Characterization of Crystalline Properties of Silicon Films Formed by Joule Heating of Metal Films ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2001) p111-114.
  161. T. Sameshima, Y.Kaneko and N. Andoh, "Crystallization of Silicon Thin Films by Current-Induced Joule Heating Using Metal Films ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2001) p107-110.
  162. N. Andoh, H. Takahashi and T. Sameshima, “Formation of Polycrystalline Silicon Films Using Electrical-Current-Induced Joule Heating”, Proc. in Mat. Res. Soc. Symp. 664 (San Francisco, 2001) A.6.2.1-6.
  163. T. Watanabe, N. Andoh, T. Sameshima, “ELECTRICAL PROPERTIES AND DEFECT STATES OF LASER CRYSTALLIZED POLYCRYSTALLINE SILICON FILMS.”, Proc. in Mat. Res. Soc. Symp. 664 (San Francisco, 2001) A.6.10.1-6.
  164. T. Watanabe, H. Watakabe and T. Sameshima, “ELECTRICAL PROPERTIES OF SOLID PHASE CRYSTALLIZED SILICON FILMS”, Proc. in Mat. Res. Soc. Symp 664 (San Francisco, 2001) A.6.3.1 -6.
  165. T. Sameshima. K. Asada, Y. Tsunoda and Y. Kaneko, “IMPROVEMENT IN ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS BY THE H2O VAPOR ANNEALING METHOD”, Proc. in Mat. Res. Soc. Symp. 664 (San Francisco, 2001) A.16.3.1-6.
  166. Y. Tsunoda, T. Sameshima, S. Higashi, " DEFECT REDUCTION TECHNOLOGIES USED TO IMPROVE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS ", Proc. in Fifth Symp. Thin Film Transistor Technologies, ed. Y. Kuo, (Penning, 2001) p229-235.

    167. PAGE TOP


    2000年

  167. T. Watanabe, T. Sameshima, and M. Ide, "Application of Three Dimensional layered structure to Semiconductor Device Fabrication", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo Japan, 2000) p133-136.
  168. Y. Tsunoda, K. Asada, T. Sameshima, S. Higashi and M. Miyasaka, "Characterization of Polycrystalline Silicon Thin Film Transistor Fabricated by Laser Crystallization ", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p153-156.
  169. K. Asada, K. Sakamoto, T. Sameshima and S. Higashi, "Reduction of Defect States in Polycrystalline Silicon Films at Low Temperatures", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p195-198.
  170. T. Sameshima, " Rapid Crystallization of Silicon Thin Films and Its Device Application ", Proc. in 10th workshop on crystalline silicon solar cell materials and processes (Colorado, 2000) p109-116.
  171. T. Watanabe, T. Sameshima, K. Nakahata, T. Kamiya, and I. Shimizu, "Free Carrier Optical Absorption Used to Analyze Electrical Properties of Polycrystalline Silicon Films Formed By Plasma Enhanced Chemical Vapor Deposition", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p199-202.
  172. T. Sameshima, K. Ozaki, H. Takahashi and N. Andoh, "Formation of Large Crystalline Grain Silicon Films by Electrical Current-Induced Joule Heating", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p207-210.
  173. N. Andoh, K. Ozaki, H. Takahashi and T. Sameshima, " Characterization of Crystalline Properties of Silicon Films Formed by Current-Induced Joule Heating", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p261-264.
  174. S. Higashi, D. Abe, Y. Tsunoda and T. Sameshima, " Low Temperature Formation of Device Quality MOS Interface Using SiO Evaporation in Oxygen Radical Atmosphere", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 2000) p257-260.

    175. PAGE TOP


    1999年

  175. N. Andoh, K. Hayashi, T. Shirasawa, T. Sameshima and K. Kamisako, "Effect of Film Thickness on Electrical Property of microcrystalline silicon films", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p987-988.
  176. N. Andoh, K. Kamisako, T. Sameshima and T. Saitoh, "Epitaxial Growth of Polycrystalline Films Formed by Microwave Plasma Chemical Vapor Deposition at Low Temperatures", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p986.
  177. T. Sameshima, K. Sakamoto, K. Asada and S. Higashi, "Reduction of Defects of Polycrystalline Thin Films by Heat Treatment with High Pressure H2O Vapor", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p931-934.
  178. S. Ishigame, K. Ozaki, T. Sameshima and S. Higashi, "Characterization of Pulsed Laser Crystallization of Silicon Thin Film", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p803-804.
  179. S. Sakamoto, K. Asada, T. Sameshima and T. Saitoh、"High-Pressure H2O Vapor Heating Used for Passivation of SiO2/Si Interfaces", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p371-372.
  180. S. Sakamoto, K. Asada and T. Sameshima、"Field Effect Surface Passivation of SiO2/Si Interfaces by Heat Treatment with High-Pressure H2O Vapor", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p369-370.
  181. T. Sameshima, K. Saitoh, N. Aoyama, M. Tanda, M. Kondo, A. Matsuda and S. Higashi, "Analysis of Free Carrier Optical Absorption Used for Characterization of Microcrystalline Silicon Films", Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Sapporo, 1999) p211-212.
  182. Y. Tsunoda, K. Sakamoto, T. Sameshima and S. Higashi, "Pulsed Laser Crystallization of Silicon Films in Radical Atmosphere", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p279-282.
  183. K. Asada, K. Sakamoto, T. Sameshima and S. Higashi, "High-Pressure H2O Vapor Annealing Used to Improve Electrical Properties of Pulsed Laser Crystallized Silicon Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p135-138.
  184. K, Sakamato, T. Sameshima Y. Tsunoda and S. Higashi, "Improvement in Electrical Properties of Pulsed Laser Crystallized Silicon Films by Plasma Hydrogenation" Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p131-134.
  185. K. Ozaki, S. Ishigame, T. Sameshima and S. Higashi, "Characterization of Pulsed Laser Crystallization of Silicon Thin Films", Proc.in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p111-114.
  186. T. Sameshima, K. Saitoh, N. Aoyama, M. Tanda, M. Kondo, A. Matsuda and S. Higashi, "Characterization of Doped Polycrystalline Silicon Films Using Free Carrier Optical Absorption", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p107-110.
  187. T. Sameshima, K. Andoh, K. Kamisako and S. Higashi, "Stress Induced by Pulsed Laser Crystallization in Silicon Films", Proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1999) p103-106.
  188. T. Sameshima, "Structural and Electronic Properties of Laser Crystallized Silicon Films", Proc in Mat. Res. Soc. Symp. 536 (1999) p427-438 (invited)

    189. PAGE TOP


    1998年

  189. T. Sameshima, K. Saitoh, K. Sakamoto and K. Ozaki, "Improvement in Characteristics of Thin Film Transistors by Heat Treatment with H2O Vapor", proc. in Workshop on Active Matrix Liquid Crystal Displays (Tokyo,1998) p97-100.
  190. K. Kamisako, N. Andoh, L. Lo, M. Hatta, H. Nagayoshi and T. Sameshima, "Characterization of Mirocrystalline Silicon Films Prpared by Hydrogene-Rdical CVD Method", Proc. in 2nd World Conference on Photovoltaic Solar Energy Conversion (Viena, 1998) p869-871.
  191. T. Sameshima, K. Sakamoto, K. Saitoh and M. Satoh, "Reduction of Defects of Amorphous and Polycrystalline Silicon Thin Films by Heat Treatment with H2O Vapor", Proc. in2nd World Conference on Photovoltaic Solar Energy Conversion (Viena, 1998) p875-878.
  192. K. Sakamoto, M. Satoh and T. Sameshima, "Improvement of SiO2 Properties by High Pressure H2O Vapor Heating for Passivation of SiO2/Si interfaces", Proc. in 2nd World Conference on Photovoltaic Solar Energy Conversion (Viena, 1998) p1591-1594.
  193. N. Koshida, E. Takizawa, H. Mizuno, S. Arai, H. Koyama and T. Sameshima, “Electroluminescent Devices Based on Polycrystalline Silicon Films for Large-Area Applications”, Proc. in Mat. Res. Soc. Symp, 486 (Boston, 1998) p151-156.

    194. PAGE TOP


    1997年

  194. K. Saitoh, A. Hisamatsu, T. Mohri and T. Sameshima, “The Carrier Mobility of Laser Crystallized Silicon Films”, Proc. in Third Int. Workshop on Active Matrix Liquid Crystal Displays (Tokyo, 1997) p179-181.


    195. 1996年

  195. T. Sameshima, "Fabrication Technologies of Polycrystalline Silicon Thin Film Transistors at a Low Temparature", Proc. in Third Symp. Thin Film Transistor Technologies, ed. Y. Kuo, 96 (San Antonio, 1996) p21-29.(invited) .
  196. T. Sameshima,N. Takashima, K. Saitoh and N. Betsuda, "Optical and Electrical Properties of Laser Crystallized Silicon Films", Proc. in Third Symp. Thin Film Transistor Technologies, ed. Y. Kuo, 96 (San Antonio Penning, New Jersey, 1996) p296-301.
  197. N. Takashima, M. Satoh, A. Tajima and T. Sameshima, “Self- Heating of Polycrystalline Silicon Thin Film Transistors”, Proc. in Third Int. Workshop on Active Matrix Liquid Crystal Displays (Kobe, Japan, 1996) p89-92.
  198. T. Sasaki, M. Satoh, T. Tajima, M. Mohri, T. Sameshima and T. Saitoh, “Improvement of SiO2/Si Interface Properties by Annealing in Wet Atmosphere”, Technical Digest of the Int. Photovoltaic Solar Energy Conf. (Miyazaki, 1996) p705-706.
  199. K. Asai, K. Watanabe, T. Sameshima , T. Saitoh and Y-M. Xiong, "Optical properties of ion-implanted laser annealed Si studied by spectroscopic ellipsometry”, Proc in the international symposium on polarization analysis and applications to device technology, the international society for optical engineering 2873 (Yokohama, 1996), p258-261.
  200. A. Tajima, N. Takashima Y. Sunaga and T. Sameshima, "Rapid Thermal Annealing Using the Combustion of H2 with N2O", Proc. in 1996 Solid State Device and Materials (Yokohama, 1996) p245-247.

    201. PAGE TOP


    1995年

  201. G. Langguth and T. Sameshima, “Silicon Solar Cell Passivation by Low-Temperature Evaporation of SiO2“, Proc. in 13th European Photovoltaic Solar Energy Conf. (Oxfordshire, UK, 1995) p1530-1533,.
  202. T. Sameshima, and G. Langguth, "SiO2 Thin Films Formation by Reactive Evaporation of SiO at a Low Temperature and Its Device Application", Proc. in 1995 Solid State Device and Materials (Osaka, 1995) p494-496.
  203. T. Sameshima, "Does a Low Thermal Budget Help Us? -Crystallization, SiO2 and TFT ", Proc. in 1995 Solid State Device and Materials (Osaka, 1995) p530-532. (invited) .
  204. T. Sameshima, M. Sekiya, M. Hara, N. Sano and A. Kohno, "Carrier Transport in Polycrystalline and Amorphous Silicon Thin Film Transistors", Proc. in Mat. Res. Soc. Symp. 358 (Boston, 1995) p927-932.

    205. PAGE TOP


    1979～1994年

  205. T. Sameshima, "Laser Annealing used in the Fabrication of Thin Film Transistors", Proc in First international Conference of Photoexiceted Processing Workshop (Sendai, 1994) p12.
  206. T. Sameshima, "Laser Beam Application in Semiconductor Technology", Proc in Conference on Polycrystalline Semiconductors III 37and 38 (Saint Malo, 1994) p269-280. (invited)
  207. T. Sameshima, "Pulsed Laser Annealing of Silicon Films", Proc. in Mat. Res. Soc. Symp. 283 (Boston, 1993) p679-689 (invited).
  208. T. Sameshima and S. Usui, " Pulsed laser-Induced Crystallization and Amorphization of SiGe films", Proc. in Mat. Res. Soc. Symp. 258 (San Francisco,1992) p117-122.
  209. T. Sameshima, M. Hara and S. Usui, "Pulsed Laser-Induced Amorphization of Silicon Films", Proc. in Mat. Res. Soc. Symp. 235 (Boston, 1992) p89-84.
  210. T. Sameshima and S. Usui, "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs", Proc. in Advanced and Future Microelectronics Workshop V, (Suoabo, Korea, 1991) p189-199. (invited)
  211. T. Sameshima and M. Hara and S. Usui, "XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTs", Proc in Conference on Polycrystalline Semiconductors II, 54 (Schwaebisch-Hall,1991) p342-347.
  212. T. Sameshima and S.Usui, "XeCl Excimer Laser-Induced Amorphization and Crystallization of Silicon Films", Extended Abstracts in 22th Conference on Solid State Devices and Materials, (Sendai, 1990) p967-970.
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